A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

10.1109/IEDM.2007.4418881

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Bibliographic Details
Main Authors: Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83384
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83384

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