A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

10.1109/IEDM.2007.4418881

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Main Authors:	Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83384
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83384
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spelling	sg-nus-scholar.10635-833842024-11-11T18:19:24Z A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE 10.1109/IEDM.2007.4418881 Technical Digest - International Electron Devices Meeting, IEDM 127-130 TDIMD 2014-10-07T04:40:37Z 2014-10-07T04:40:37Z 2007 Conference Paper Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007). A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors. Technical Digest - International Electron Devices Meeting, IEDM : 127-130. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418881 01631918 http://scholarbank.nus.edu.sg/handle/10635/83384 000259347800026 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2007.4418881
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
author_sort	Tan, K.-M.
title	A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
title_short	A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
title_full	A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
title_fullStr	A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
title_full_unstemmed	A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
title_sort	new liner stressor with very high intrinsic stress (> 6 gpa) and low permittivity comprising diamond-like carbon (dlc) for strained p-channel transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83384
_version_	1821188946428690432

A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

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