Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

10.1109/LED.2009.2017213

Saved in:
Bibliographic Details
Main Authors: Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
External resistance
FinFET
Platinum silicide
Schottky barrier
Silicon carbon
Sulfur
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83114
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-83114
record_format dspace
spelling sg-nus-scholar.10635-831142024-11-11T07:46:33Z Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance Lee, R.T.-P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING External resistance FinFET Platinum silicide Schottky barrier Silicon carbon Sulfur 10.1109/LED.2009.2017213 IEEE Electron Device Letters 30 5 472-474 EDLED 2014-10-07T04:37:26Z 2014-10-07T04:37:26Z 2009 Article Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213 07413106 http://scholarbank.nus.edu.sg/handle/10635/83114 000265711700016 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic External resistance
FinFET
Platinum silicide
Schottky barrier
Silicon carbon
Sulfur
spellingShingle External resistance
FinFET
Platinum silicide
Schottky barrier
Silicon carbon
Sulfur
Lee, R.T.-P.
Lim, A.E.-J.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C.
Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
description 10.1109/LED.2009.2017213
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lee, R.T.-P.
Lim, A.E.-J.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C.
format Article
author Lee, R.T.-P.
Lim, A.E.-J.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C.
author_sort Lee, R.T.-P.
title Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
title_short Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
title_full Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
title_fullStr Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
title_full_unstemmed Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
title_sort sulfur-induced ptsi:c/si:c schottky barrier height lowering for realizing n-channel finfets with reduced external resistance
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83114
_version_ 1821232294372835328

Similar Items