P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

• Main Authors: Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: FinFET; Nickel platinum; Nickel silicide; Resistance; Schottky barriers
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82868
• Institution: National University of Singapore

10.1109/LED.2008.920755