P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

10.1109/LED.2008.920755

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Bibliographic Details
Main Authors: Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFET
Nickel platinum
Nickel silicide
Resistance
Schottky barriers
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82868
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-828682023-10-27T08:35:16Z P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance Lee, R.T.-P. Tan, K.-M. Lim, A.E.-J. Liow, T.-Y. Samudra, G.S. Chi, D.-Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING FinFET Nickel platinum Nickel silicide Resistance Schottky barriers 10.1109/LED.2008.920755 IEEE Electron Device Letters 29 5 438-441 EDLED 2014-10-07T04:34:27Z 2014-10-07T04:34:27Z 2008-05 Article Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2008-05). P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance. IEEE Electron Device Letters 29 (5) : 438-441. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920755 07413106 http://scholarbank.nus.edu.sg/handle/10635/82868 000255317400007 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic FinFET
Nickel platinum
Nickel silicide
Resistance
Schottky barriers
spellingShingle FinFET
Nickel platinum
Nickel silicide
Resistance
Schottky barriers
Lee, R.T.-P.
Tan, K.-M.
Lim, A.E.-J.
Liow, T.-Y.
Samudra, G.S.
Chi, D.-Z.
Yeo, Y.-C.
P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
description 10.1109/LED.2008.920755
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lee, R.T.-P.
Tan, K.-M.
Lim, A.E.-J.
Liow, T.-Y.
Samudra, G.S.
Chi, D.-Z.
Yeo, Y.-C.
format Article
author Lee, R.T.-P.
Tan, K.-M.
Lim, A.E.-J.
Liow, T.-Y.
Samudra, G.S.
Chi, D.-Z.
Yeo, Y.-C.
author_sort Lee, R.T.-P.
title P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
title_short P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
title_full P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
title_fullStr P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
title_full_unstemmed P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
title_sort p-channel tri-gate finfets featuring ni1-yptysige source/drain contacts for enhanced drive current performance
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82868
_version_ 1781784240926490624

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