Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

• المؤلفون الرئيسيون: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Carrier mobility; III-V semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83623; http://hdl.handle.net/10220/42691

The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using ato...