Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

• Main Authors: D'Costa, Vijay Richard, Tan, Kian Hua, Jia, Bo Wen, Yoon, Soon Fatt, Yeo, Yee-Chia
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2015
• 主題: III-V semiconductors; Critical point phenomena; Dielectric thin films; Dielectric function; Epitaxy
• 在線閱讀: https://hdl.handle.net/10356/104319; http://hdl.handle.net/10220/38809

Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocation...