Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

• Main Authors: Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Jia, Bo Wen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Detectors; DRNTU::Engineering::Electrical and electronic engineering; Infrared
• Online Access: https://hdl.handle.net/10356/87347; http://hdl.handle.net/10220/47599
• Institution: Nanyang Technological University

In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice misma...