Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy

• المؤلفون الرئيسيون: Sun, Handong, Dawson, M. D., Othman, M., Yong, J. C. L., Rorison, J. M., Gilet, P., Grenouillet, L., Million, A.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101296; http://hdl.handle.net/10220/6152
• المؤسسة: Nanyang Technological University

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen...