Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy

• Main Authors: Sun, Handong, Dawson, M. D., Othman, M., Yong, J. C. L., Rorison, J. M., Gilet, P., Grenouillet, L., Million, A.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/101296; http://hdl.handle.net/10220/6152
• Institution: Nanyang Technological University

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen...