Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen...

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Main Authors: Sun, Handong, Dawson, M. D., Othman, M., Yong, J. C. L., Rorison, J. M., Gilet, P., Grenouillet, L., Million, A.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2009
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Online Access:https://hdl.handle.net/10356/101296
http://hdl.handle.net/10220/6152
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1012962023-02-28T19:38:00Z Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy Sun, Handong Dawson, M. D. Othman, M. Yong, J. C. L. Rorison, J. M. Gilet, P. Grenouillet, L. Million, A. School of Physical and Mathematical Sciences DRNTU::Science::Physics We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%–1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells. Published version 2009-11-13T04:42:17Z 2019-12-06T20:36:18Z 2009-11-13T04:42:17Z 2019-12-06T20:36:18Z 2003 2003 Journal Article Sun, H. D., Dawson, M. D., Othman, M., Yong, J. C. L., & Rorison, J. M., et al.(2003). Optical transitions in GaInNAs/GaAs multiquantum wells with various N contents investigated by photoluminescence excitation spectroscopy. Applied Physics Letters., 82(3), 376-378. 0003-6951 https://hdl.handle.net/10356/101296 http://hdl.handle.net/10220/6152 10.1063/1.1539921 en Applied Physics Letters. Applied Physics Letters © copywrite 2003 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 4 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Science::Physics
spellingShingle DRNTU::Science::Physics
Sun, Handong
Dawson, M. D.
Othman, M.
Yong, J. C. L.
Rorison, J. M.
Gilet, P.
Grenouillet, L.
Million, A.
Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
description We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%–1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Sun, Handong
Dawson, M. D.
Othman, M.
Yong, J. C. L.
Rorison, J. M.
Gilet, P.
Grenouillet, L.
Million, A.
format Article
author Sun, Handong
Dawson, M. D.
Othman, M.
Yong, J. C. L.
Rorison, J. M.
Gilet, P.
Grenouillet, L.
Million, A.
author_sort Sun, Handong
title Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
title_short Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
title_full Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
title_fullStr Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
title_full_unstemmed Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
title_sort optical transitions in gainnas/gaas multiquantum wells with varying n contents investigated by photoluminescence excitation spectroscopy
publishDate 2009
url https://hdl.handle.net/10356/101296
http://hdl.handle.net/10220/6152
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