Thermal quenching mechanism of photoluminescence in 1.55 mu m GaInNAsSb/Ga(N)As quantum-well structures

• Main Authors: Sun, Handong, Calvez, Stephane, Dawson, M. D., Gupta, J. A., Aers, G. C., Sproule, G. I.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Science::Physics::Optics and light
• Online Access: https://hdl.handle.net/10356/91587; http://hdl.handle.net/10220/6057; http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2006&volume=89&issue=10&spage=&epage=&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Thermal%20quenching%20mechanism%20of%20photoluminescence%20in%201%2E55%20%CE%BCm%20GalnNAsSb%2FGa%28N%29As%20quantum%2Dwell%20structures&sici.
• Institution: Nanyang Technological University

The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 mu m at room temperature and whose design is such that the quantum wells have nominally identical valence band profiles but show different c...