GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

• Main Authors: Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: Electrical and Electronic Engineering
• 在線閱讀: https://hdl.handle.net/10356/100759; http://hdl.handle.net/10220/18144
• 機構: Nanyang Technological University

A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at 1.2 eV. After annealing at 650 °C, a large blueshift of 40 meV was observed. The photocurrent peak at 1.24 m is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k· p calculations agree with the above observations.