Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
10.1063/1.2335804
Saved in:
Main Authors: | Liu, H.F., Xiang, N., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56327 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Molecular beam epitaxial growth of GaNAs and GaInNAs and their characterization
by: Ng, Tien Khee
Published: (2008) -
Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing
by: Liu, H.F., et al.
Published: (2014) -
Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy
by: Liu, H.F., et al.
Published: (2014) -
Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy
by: Liu, H.F., et al.
Published: (2014) -
Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxy
by: Liu, H.F., et al.
Published: (2014)