Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
10.1063/1.2335804
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sg-nus-scholar.10635-563272024-11-12T22:40:38Z Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy Liu, H.F. Xiang, N. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2335804 Applied Physics Letters 89 7 - APPLA 2014-06-17T02:53:21Z 2014-06-17T02:53:21Z 2006 Article Liu, H.F., Xiang, N., Chua, S.J. (2006). Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters 89 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335804 00036951 http://scholarbank.nus.edu.sg/handle/10635/56327 000239842400023 Scopus |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Liu, H.F. Xiang, N. Chua, S.J. |
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Liu, H.F. Xiang, N. Chua, S.J. |
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Liu, H.F. Xiang, N. Chua, S.J. Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy |
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Liu, H.F. |
title |
Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy |
title_short |
Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy |
title_full |
Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy |
title_fullStr |
Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy |
title_full_unstemmed |
Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy |
title_sort |
influence of n incorporation on in content in gainnas/ganas quantum wells grown by plasma-assisted molecular beam epitaxy |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/56327 |
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