Effect of indium segregation on optical and structural properties of GaInNAsGaAs quantum wells at emission wavelength of 1.3 μm

10.1063/1.2362907

Saved in:
Bibliographic Details
Main Authors: Liu, H.F., Dixit, V., Xiang, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55747
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore