Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

10.1063/1.2472275

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Bibliographic Details
Main Authors: Liu, H.F., Chua, S.J., Xiang, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56167
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Institution: National University of Singapore