GaN-based semiconductor saturable absorber mirror operating around 415 nm
10.1016/j.tsf.2006.07.138
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2014
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sg-nus-scholar.10635-509312023-10-27T07:32:36Z GaN-based semiconductor saturable absorber mirror operating around 415 nm Xiang, N. Lin, F. Li, H.P. Liu, H.F. Liu, W. Ji, W. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING PHYSICS GaN Saturable absorber Semiconductors 10.1016/j.tsf.2006.07.138 Thin Solid Films 515 10 4484-4487 THSFA 2014-04-24T07:21:33Z 2014-04-24T07:21:33Z 2007-03-26 Article Xiang, N., Lin, F., Li, H.P., Liu, H.F., Liu, W., Ji, W., Chua, S.J. (2007-03-26). GaN-based semiconductor saturable absorber mirror operating around 415 nm. Thin Solid Films 515 (10) : 4484-4487. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.138 00406090 http://scholarbank.nus.edu.sg/handle/10635/50931 000245167000040 Scopus |
| institution |
National University of Singapore |
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NUS Library |
| continent |
Asia |
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Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
GaN Saturable absorber Semiconductors |
| spellingShingle |
GaN Saturable absorber Semiconductors Xiang, N. Lin, F. Li, H.P. Liu, H.F. Liu, W. Ji, W. Chua, S.J. GaN-based semiconductor saturable absorber mirror operating around 415 nm |
| description |
10.1016/j.tsf.2006.07.138 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Xiang, N. Lin, F. Li, H.P. Liu, H.F. Liu, W. Ji, W. Chua, S.J. |
| format |
Article |
| author |
Xiang, N. Lin, F. Li, H.P. Liu, H.F. Liu, W. Ji, W. Chua, S.J. |
| author_sort |
Xiang, N. |
| title |
GaN-based semiconductor saturable absorber mirror operating around 415 nm |
| title_short |
GaN-based semiconductor saturable absorber mirror operating around 415 nm |
| title_full |
GaN-based semiconductor saturable absorber mirror operating around 415 nm |
| title_fullStr |
GaN-based semiconductor saturable absorber mirror operating around 415 nm |
| title_full_unstemmed |
GaN-based semiconductor saturable absorber mirror operating around 415 nm |
| title_sort |
gan-based semiconductor saturable absorber mirror operating around 415 nm |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/50931 |
| _version_ |
1781411634124685312 |