AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

• Main Author: Ahmed Salah Hawash Razeen
• Other Authors: Radhakrishnan K
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering; AlGaN/GaN; HEMT; UV photodetectors; Nanophotonics
• Online Access: https://hdl.handle.net/10356/177664
• Institution: Nanyang Technological University

AlGaN/GaN HEMT structures have gained significant attention in recent years due to their wide range of applications in power and optoelectronics, including electric vehicles, environmental monitoring, and satellite communication. These structures possess excellent properties such as wide bandgap, hi...