Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...
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sg-ntu-dr.10356-1075922023-07-14T15:58:42Z Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors Gao, Yu Gan, Chee Lip Thompson, C. V. Sasangka, W. A. School of Materials Science & Engineering AlGaN/GaN HEMTs Leakage Current Engineering::Materials We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕB0 < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region. NRF (Natl Research Foundation, S’pore) Accepted version 2019-11-06T07:05:25Z 2019-12-06T22:35:10Z 2019-11-06T07:05:25Z 2019-12-06T22:35:10Z 2018 Journal Article Sasangka, W. A., Gao, Y., Gan, C. L., & Thompson, C. V. (2018). Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 88-90393-396. doi:10.1016/j.microrel.2018.06.048 0026-2714 https://hdl.handle.net/10356/107592 http://hdl.handle.net/10220/50348 10.1016/j.microrel.2018.06.048 en Microelectronics Reliability © 2018 Elsevier. All rights reserved. This paper was published in Microelectronics Reliability and is made available with permission of Elsevier. 7 p. application/pdf |
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AlGaN/GaN HEMTs Leakage Current Engineering::Materials |
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AlGaN/GaN HEMTs Leakage Current Engineering::Materials Gao, Yu Gan, Chee Lip Thompson, C. V. Sasangka, W. A. Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors |
| description |
We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕB0 < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region. |
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School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Gao, Yu Gan, Chee Lip Thompson, C. V. Sasangka, W. A. |
| format |
Article |
| author |
Gao, Yu Gan, Chee Lip Thompson, C. V. Sasangka, W. A. |
| author_sort |
Gao, Yu |
| title |
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors |
| title_short |
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors |
| title_full |
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors |
| title_fullStr |
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors |
| title_full_unstemmed |
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors |
| title_sort |
impact of carbon impurities on the initial leakage current of algan/gan high electron mobility transistors |
| publishDate |
2019 |
| url |
https://hdl.handle.net/10356/107592 http://hdl.handle.net/10220/50348 |
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1773551357497704448 |