Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

We have systematically studied the effects of SixN1 − x passivation density on the reliability of AlGaN/GaN high electron mobility transistors. Upon stressing, devices degrade in two stages, fast-mode degradation and followed by slow-mode degradation. Both degradations can be explained as different...

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Bibliographic Details
Main Authors: Sasangka, W. A., Syaranamual, G. J., Gao, Yu, Made, Riko I, Gan, Chee Lip, Thompson, C. V.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2017
Subjects:
Online Access:https://hdl.handle.net/10356/86854
http://hdl.handle.net/10220/44195
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Institution: Nanyang Technological University
Language: English
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