Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

• Main Authors: Ju J., Sun B., Haunschild G., Loitsch B., Stoib B., Brandt M.S., Stutzmann M., Koh Y.K., Koblmüller G.
• Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
• Format: Article
• Published: 2020
• Subjects: Energy gap; Gallium alloys; III-V semiconductors; Molecular beam epitaxy; Nitrides; Semiconductor alloys; Temperature measurement; Thermal conductivity; Thermoelectric equipment; Thermoelectricity; Confinement effects; Electrical conductivity; Group III nitrides; N-type InGaN; Power factors; Short periods; Ternary nitrides; Thermoelectric properties; Indium alloys
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/174628
• Institution: National University of Singapore

10.1063/1.4948446