Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

• المؤلفون الرئيسيون: Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Zheng, Y.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Si Doping; Molecular Beam Epitaxy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154964

The effects of Si doping well beyond the Mott transition limit on the structural, electrical, and optical properties of plasma assisted molecular beam epitaxy grown GaN layers were studied. Si doping up to a doping density of <1.0 × 1020 cm-3 resulted in smooth surface morphologies and almost str...