APA引文

Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Zheng, Y., & Engineering, S. o. E. a. E. (2022). Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy.

Chicago Style Citation

Lingaparthi, R., Nethaji Dharmarasu, K. Radhakrishnan, Y. Zheng, and School of Electrical and Electronic Engineering. Effects of Si Doping Well Beyond the Mott Transition Limit in GaN Epilayers Grown By Plasma-assisted Molecular Beam Epitaxy. 2022.

MLA引文

Lingaparthi, R., et al. Effects of Si Doping Well Beyond the Mott Transition Limit in GaN Epilayers Grown By Plasma-assisted Molecular Beam Epitaxy. 2022.