發送短信 : Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

  _  __    ______    ______     ___      _  __  
 | |/ //  /_   _//  /_____//   / _ \\   | |/ // 
 | ' //    -| ||-   `____ `   | / \ ||  | ' //  
 | . \\    _| ||_   /___//    | \_/ ||  | . \\  
 |_|\_\\  /_____//  `__ `      \___//   |_|\_\\ 
 `-` --`  `-----`   /_//       `---`    `-` --` 
                    `-`