Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

• المؤلف الرئيسي: Manvi Agrawal
• مؤلفون آخرون: K. Radhakrishnan
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/54999
• المؤسسة: Nanyang Technological University

III-nitride semiconductors have received significant research attention and undergone immense development due to their widely found applications in microelectronic and optoelectronic devices. Among them, GaN based materials promise great potential for high frequency, high power, and high temperature...