Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

III-nitride semiconductors have received significant research attention and undergone immense development due to their widely found applications in microelectronic and optoelectronic devices. Among them, GaN based materials promise great potential for high frequency, high power, and high temperature...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Manvi Agrawal
مؤلفون آخرون:	K. Radhakrishnan
التنسيق:	Theses and Dissertations
اللغة:	English
منشور في:	2013
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/54999
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	Nanyang Technological University
اللغة:	English

مواد مشابهة

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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
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