Electrical and structural characterization of GaN based semiconductor layers

Gallium nitride (GaN) has gained the interest of both the academics and electronic companies in recent years, and is seen as a promising material for both optoelectronics devices in the blue-ultraviolent range and high power and high frequency HEMT devices. This is due to its high breakdown voltage,...

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Bibliographic Details
Main Author: Lee, Pui Ki.
Other Authors: K Radhakrishnan
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/42843
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Institution: Nanyang Technological University
Language: English