Electrical and structural characterization of GaN based semiconductor layers
Gallium nitride (GaN) has gained the interest of both the academics and electronic companies in recent years, and is seen as a promising material for both optoelectronics devices in the blue-ultraviolent range and high power and high frequency HEMT devices. This is due to its high breakdown voltage,...
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Format: | Final Year Project |
Language: | English |
Published: |
2011
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Online Access: | http://hdl.handle.net/10356/42843 |
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Institution: | Nanyang Technological University |
Language: | English |