Electrical characterization of GaN-based layer structures

• Main Author: Firdous Banu
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/45886
• Institution: Nanyang Technological University

Wide band gap semiconductors are attractive for several microelectronic and photonic applications such as high power amplifiers, LEDs and laser diodes. Particularly, GaN-based semiconductors are promising as they exhibit attractive properties such as low intrinsic carrier concentration and high ther...