Electrical characterization of GaN-based layer structures

Wide band gap semiconductors are attractive for several microelectronic and photonic applications such as high power amplifiers, LEDs and laser diodes. Particularly, GaN-based semiconductors are promising as they exhibit attractive properties such as low intrinsic carrier concentration and high ther...

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Bibliographic Details
Main Author: Firdous Banu
Other Authors: K Radhakrishnan
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/45886
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Institution: Nanyang Technological University
Language: English

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