Electrical and structural characterization of GaN based semiconductor layers

• Main Author: Lee, Pui Ki.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/42843
• Institution: Nanyang Technological University

Gallium nitride (GaN) has gained the interest of both the academics and electronic companies in recent years, and is seen as a promising material for both optoelectronics devices in the blue-ultraviolent range and high power and high frequency HEMT devices. This is due to its high breakdown voltage,...