Studies on GaN-based semiconductor low cost ammonia gas sensors

• المؤلف الرئيسي: Irfan Haziq Abdul Gani
• مؤلفون آخرون: Radhakrishnan K
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/140246

Gas sensing devices have been in increasing focus across industries and research in the past few decades. This project is intent on studying Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) for gas sensing applications, together with the properties of Two Dimensional Electron G...