Studies on GaN-based semiconductor low cost ammonia gas sensors

Gas sensing devices have been in increasing focus across industries and research in the past few decades. This project is intent on studying Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) for gas sensing applications, together with the properties of Two Dimensional Electron G...

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Bibliographic Details
Main Author: Irfan Haziq Abdul Gani
Other Authors: Radhakrishnan K
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
Subjects:
Online Access:https://hdl.handle.net/10356/140246
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Institution: Nanyang Technological University
Language: English