In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

by Wang, Y, Lee, K.H, Loke, W.K, Ben Chiah, S, Zhou, X, Yoon, S.F, Tan, C.S, Fitzgerald, E
Published 2020