High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

by Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H.R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M.M., Smith, C., Banerjee, S., Tsai, W., Thompson, S.E., Tseng, H.H., Jammy, R.
Published 2014