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Razali Ismail

Razali in 2015

Razali bin Ismail (born 14 April 1939) is a Malaysian diplomat. He is formerly the Chairman of the Human Rights Commission of Malaysia (SUHAKAM) from 2016 to 2019. He was also the 51st President of the United Nations General Assembly from 1996 until 1997. Provided by Wikipedia

1

Cathodic stripping voltammetric studies of organic compounds in the presence of metal ions

Cathodic stripping voltammetric studies of organic compounds in the presence of metal ions

by Ismail, Razali
Published 1997

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Thesis

2

Design of 100nm pMOSFET with a SiGe heterostructure channel

Design of 100nm pMOSFET with a SiGe heterostructure channel

by Ismail, Razali
Published 2007

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Conference or Workshop Item

3

Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method

Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method

by Saad, Ismail, Ismail, Razali
Published 2008

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Article

4

Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)

Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)

by Saad, Ismail, Ismail, Razali
Published 2006

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Conference or Workshop Item

5

Design and simulation of a high performance lateral BJTs on TFSOI

Design and simulation of a high performance lateral BJTs on TFSOI

by Saad, Ismail, Ismail, Razali
Published 2006

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Conference or Workshop Item

6

Characterization analysis of nano scale vertical double gate MOSFET (VDGM) using TCAD

Characterization analysis of nano scale vertical double gate MOSFET (VDGM) using TCAD

by Ismail, Razali, Saad, Ismail
Published 2007

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Conference or Workshop Item

7

Performance and microstructural study on soap using different fatty acids and cations

Performance and microstructural study on soap using different fatty acids and cations

by Nadarajan, Renugambaal, Ismail, Razali
Published 2011

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Article

8

A review of graphene based field effect transistor architecture and channel geometry

A review of graphene based field effect transistor architecture and channel geometry

by Johari, Zaharah, Ismail, Razali
Published 2015

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Article

9

Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET

Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET

by Saad, Ismail, Ismail, Razali
Published 2007

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Conference or Workshop Item

10

Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate MOSFET

Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate MOSFET

by Saad, Ismail, Ismail, Razali
Published 2007

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Conference or Workshop Item

11

Unified drain current model of armchair graphene nanoribbons with uniaxial strain and quantum effect

Unified drain current model of armchair graphene nanoribbons with uniaxial strain and quantum effect

by Ismail, Razali, Kang, Engsiew
Published 2014

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Article

12

Simulation of trigate fet with semi-cylindrical channel to reduce corner effect

Simulation of trigate fet with semi-cylindrical channel to reduce corner effect

by Ismail, Razali, Hamid, Fatimah
Published 2013

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Conference or Workshop Item

13

Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

by Teoh, Chin Hong, Ismail, Razali
Published 2006

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Conference or Workshop Item

14

Analytical performance of 3 m and 3 m+1 armchair graphene nanoribbons under uniaxial strain

Analytical performance of 3 m and 3 m+1 armchair graphene nanoribbons under uniaxial strain

by Kang, Eng Siew, Ismail, Razali
Published 2014

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Article

15

The effect of different ge concentration on the characteristics of strain silicon MOSFET

The effect of different ge concentration on the characteristics of strain silicon MOSFET

by Jin, Wong Yah, Ismail, Razali
Published 2007

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16

Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel

Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel

by Alias, Nurul Ezaila, Ismail, Razali
Published 2018

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Conference or Workshop Item

17

Modelling of nanoscale MOSFET performance in the velocity saturation region

Modelling of nanoscale MOSFET performance in the velocity saturation region

by Tan, Micheal Loong Peng, Ismail, Razali
Published 2007

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Article

18

Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V

Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V

by Rajah, Prakash, Ismail, Razali, Rajah, Avinash
Published 2004

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Book Section

19

Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime

Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime

by Saad, Ismail, Sulaiman, Ima, Ismail, Razali
Published 2008

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Article

20

Investigation on the effects of halo implants for nanoscale vertical MOSFET

Investigation on the effects of halo implants for nanoscale vertical MOSFET

by Ismail, Razali, Saad, Ismail, Arora, Vijay
Published 2007

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Conference or Workshop Item

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