High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

by Khai, L.W., Geok Ing, N., Fitzgerald, E.A., Soon Fatt, Y., Yue, W., Kwang Hong, L., Zhihong, L., Hanlin, X., Siau Ben, C., Eng Kian, K.L., Xing, Z., Tan, C.S.
Published 2021