Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact

by Bera, M.K., Liu, Y., Kyaw, L.M., Ngoo, Y.J., Chor, E.F.
Published 2014

Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 Passivation

by Kyaw, L.M., Liu, Y., Bera, M.K., Ngoo, Y.J., Tripathy, S., Chor, E.F.
Published 2014

Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon

by Kyaw, L.M., Dolmanan, S.B., Bera, M.K., Liu, Y., Tan, H.R., Bhat, T.N., Dikme, Y., Chor, E.F., Tripathy, S.
Published 2014