A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric...

by Chin, H.-C., Zhu, M., Lee, Z.-C., Liu, X., Tan, K.-M., Lee, H.K., Shi, L., Tang, L.-J., Tung, C.-H., Lo, G.-Q., Tan, L.-S., Yeo, Y.-C.
Published 2014