Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

by Kumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C.
Published 2016