Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

by Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N.
Published 2013

Results from the IAEA benchmark of spallation models

by Khandaker, M.M., Michel, R., Leray, S., David, J.C., Konobeyev, A., Mank, G., Mengoni, A., Otsuka, N., Filges, D., Gallmeier, F.
Published 2011