Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

by Samsudin, M. E. A., Zainal, N., Hassan, Z.
Published 2015

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition

by Samsudin, M. E. A., Alias, E. A., Iza, M., Speck, J. S., Denbaars, S. P., Nakamura, S., Zainal, N.
Published 2019

Effect Of Nucleation Time With Tmal Preflow Assistance On Reducing Dislocation Density Of Aln Layer For AlGaN-Based UVC LED

by Samsudin, M. E. A., Yusuf, Y., Zollner, C., Iza, M., Speck, J. S., Denbaars, S. P., Nakamura, S., Zainal, N.
Published 2020

Effect Of Nucleation Time With TMAl Preflow Assistance On Reducing Dislocation Density Of Aln Layer For

by Samsudin, M. E. A., Yusuf, Y., Zollner, C., Iza, M., Speck, J. S., Denbaars, S. P., Nakamura, S., Zainal, N.
Published 2020

Comparison Between Vertical-Stand Packaging And Planar-Mounted Packaging For Gan On Gan Led

by Alias, E. A., Samsudin, M. E. A., Zainal, N., Iza, M., Hassan, Abdullah I., Denbaars, S. P., Speck, J. S., Nakamura, S.
Published 2019

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

by Azman, Adreen, Shuhaimi, Ahmad, Omar, Al-Zuhairi, Kamarundzaman, Anas, Abdul Khudus, Muhammad Imran Mustafa, Ariff, Azharul, Samsudin, M.E.A., Zainal, Norzaini, Rahman, Saadah Abdul
Published 2018

The Growth Of Aln Single Layer On Sapphire At Low Pressure Using Metalorganic Chemical Vapor Deposition (MOCVD)

by Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Way, Foong Lim, Samsudin, M. E. A., Hanafiah, A. M., Yusuf, Yusnizam, Ahmad, M. A., Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
Published 2019