AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating

by Liu X., Lu Y., Yu W., Wu J., He J., Tang D., Liu Z., Somasuntharam P., Zhu D., Liu W., Cao P., Han S., Chen S., Seow Tan L.
Published 2020