The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing

by Batool, Z., Hild, K., Hosea, Thomas Jeffrey Cockburn, Lu, X., Tiedje, T., Sweeney, S. J.
Published 2012

Resonance of bandgap and spin-orbit splitting ingabias/gaas alloys

by Mohmad, A. R., Hild, K., Sweeney, S. J., Hosea, Thomas Jeffrey Cockburn, Batool, Zahida
Published 2011

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

by Blume, G., Hild, K., Marko, I. P., Hosea, T. J. C., Yu, S.-Q., Chaparro, S. A., Samal, N., Johnson, S. R., Zhang, Y.-H., Sweeney, S. J.
Published 2012

Temperature and bi-concentration dependence of the bandgap and spin-orbit splitting in ingabias/inp semiconductors for mid-infrared applications

by I. P., Marko, Batool, Z., Hild, K., Jin, S. R., Hossain, N., Hosea, T. J. C., Petropoulos, J. P., Zhong, Y., Dongmo, P. B., Zide, J. M. O, Sweeney, S. J.
Published 2012

Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆(so) > E-g

by Chai, Grace M. T., Broderick, Christopher A., O'Reilly, Eoin P. O., Othaman, Zulkafli, Jin, Shirong, Petropoulos, J. P., Zhong, Yujun, Dongmo, Pernell B., Zide, Joshua M. O., Sweeney, Stephen J., Hosea, Thomas Jeff Cockburn
Published 2015