InAlN/GaN high electron mobility transistors on Si for RF applications

由 Xing, Weichuan
出版 2018

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

由 Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
出版 2018

InAlN/GaN HEMTs on Si With High fT of 250 GHz

由 Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
出版 2020