InAlN/GaN high electron mobility transistors on Si for RF applications

بواسطة Xing, Weichuan
منشور في 2018

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

بواسطة Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
منشور في 2018

InAlN/GaN HEMTs on Si With High fT of 250 GHz

بواسطة Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
منشور في 2020