DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT

The problem of spontaneous emission power from a single electron with initial condition lays in ground state level conduction band Silicon quantum dot with Silicon Dioxide barrier affected photoluminescence with variation of radius of quantum dot, propagation vector of photon, photon density and ene...

Full description

Saved in:
Bibliographic Details
Main Author: JUARLIN (NIM 20206001), EKO
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/10326
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:10326
spelling id-itb.:103262017-09-27T14:40:55ZDYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT JUARLIN (NIM 20206001), EKO Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/10326 The problem of spontaneous emission power from a single electron with initial condition lays in ground state level conduction band Silicon quantum dot with Silicon Dioxide barrier affected photoluminescence with variation of radius of quantum dot, propagation vector of photon, photon density and energy of unit photon using perturbation theory is studied in this thesis. Before spontaneous emission power is calculated, determination of electron wave function in the conduction band is done. Electron wave function is multiplication of radial function and spherical harmonic function. The spherical harmonic function is determined by function of ? function of f. The determination of electron energy and radial function is done by using Matslise method and MATLAB program. The Matslise output is radial function curve from electron wave function. Curve fitting using ORIGIN is done to know the radial function. Radial function is Gaussian if radial function 0,0 R . Radial function is sinusoidal if electron is inside the quantum dot and exponential decay if electron is outside quantum dot if the radial function is not 0,0 R . Electron energy increases if quantum dot radius decreases for the same electron wave function. Laser, photon density, material and radius of quantum dot are the component determining transition probability. All are inputs for perturbation theory. From perturbation theory, the transition probability is known that is calculated using Ordinary Differential Equation function in MATLAB. The result is laser does not affect transition probability, photon density is equal to transition probability. Propagation vector of photon is not affected to transition probability. Spontaneous emission power is not affected by laser. The greatest average spontaneous emission power is occurred if quantum dot radius is 4.0 nm. Spontaneous emission power is equal to photon density. The greatest of spontaneous emission power is P - 4,87 .10-14W that is occurred by Ruby laser with photon densities is 1024 photons/m2 inside 4.0 nm radius quantum dot. <br /> text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description The problem of spontaneous emission power from a single electron with initial condition lays in ground state level conduction band Silicon quantum dot with Silicon Dioxide barrier affected photoluminescence with variation of radius of quantum dot, propagation vector of photon, photon density and energy of unit photon using perturbation theory is studied in this thesis. Before spontaneous emission power is calculated, determination of electron wave function in the conduction band is done. Electron wave function is multiplication of radial function and spherical harmonic function. The spherical harmonic function is determined by function of ? function of f. The determination of electron energy and radial function is done by using Matslise method and MATLAB program. The Matslise output is radial function curve from electron wave function. Curve fitting using ORIGIN is done to know the radial function. Radial function is Gaussian if radial function 0,0 R . Radial function is sinusoidal if electron is inside the quantum dot and exponential decay if electron is outside quantum dot if the radial function is not 0,0 R . Electron energy increases if quantum dot radius decreases for the same electron wave function. Laser, photon density, material and radius of quantum dot are the component determining transition probability. All are inputs for perturbation theory. From perturbation theory, the transition probability is known that is calculated using Ordinary Differential Equation function in MATLAB. The result is laser does not affect transition probability, photon density is equal to transition probability. Propagation vector of photon is not affected to transition probability. Spontaneous emission power is not affected by laser. The greatest average spontaneous emission power is occurred if quantum dot radius is 4.0 nm. Spontaneous emission power is equal to photon density. The greatest of spontaneous emission power is P - 4,87 .10-14W that is occurred by Ruby laser with photon densities is 1024 photons/m2 inside 4.0 nm radius quantum dot. <br />
format Theses
author JUARLIN (NIM 20206001), EKO
spellingShingle JUARLIN (NIM 20206001), EKO
DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT
author_facet JUARLIN (NIM 20206001), EKO
author_sort JUARLIN (NIM 20206001), EKO
title DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT
title_short DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT
title_full DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT
title_fullStr DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT
title_full_unstemmed DYNAMICAL ANALYSIS OPTICAL PROCESS BY PHOTON IN SILICON QUANTUM DOT
title_sort dynamical analysis optical process by photon in silicon quantum dot
url https://digilib.itb.ac.id/gdl/view/10326
_version_ 1820664943297429504