MODELING OF TUNELLING CURRENT IN ANISOTROPIC Si/Si1-x Gex/Si HETEROJUNCTION BIPOLAR TRANSISTOR AND ITS VERIFICATION
Recently, electronic device grows very fast along device performance going to better direction. This device performance improvement is caused by the possibility to arrange greater number of transistor in a chip of integrated circuit and the transistor size is get smaller. Until now, silicon is the c...
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| Format: | Dissertations |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/10805 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
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