#TITLE_ALTERNATIVE#

• Main Author: SERUNI (NIM 13704003), MAYANG
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/10865
• Institution: Institut Teknologi Bandung

Wide band gap semiconductor materials have important influence in communication and computerization necessities. LED (Light Emitting Diode) and TCO (Transparent Conductive Oxide) are the example of wide band gap material application. For LED application, Gallium Nitride with band gap energy approximately 3,4 eV were used as the materials. Whereas Indium Oxide with band gap energy approximately 3,6 were used for TCO application. However both of these materials have good performance, it has high cost. Research for low cost materials with moderate band gap to replace Gallium Nitride and Indium Oxide were doing. ZnO was the alternative material to replace both of Gallium Nitride and Indium Oxide, because ZnO has band gap energy approximately 3,37 eV and available in great quantities in nature. Thin film ZnO has transparent properties for TCO application. Undoped ZnO powders and Al2O3 doped ZnO powder was synthesized by a precursor process at this research. Acacia mangium pulp was used as a precursor. Undoped ZnO powders and Al2O3 doped ZnO powder ware obtained from synthesized of Zinc sulfate heptahydrate dan Aluminum sulfate octahydrate. Ratio between Zinc sulfate heptahydrate and pulp were 1:0,2. The calcination temperature 500 oC and 550 oC were used. Heat treatment process was doing at 1000 oC. Doping percentage of Al2O3 were 2,5% mol and 5% mol. The powders were evaluated by FT-IR, XRD, SEM, and EIS. The optimum conductivity 2,75. 10-6 S/cm was obtained by using 2,5% mol Al2O3 doping at calcination temperature 550 oC. <br />