Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method
Ab initio calculations using full-potential linearized augmented plane-wave (FP-LAPW) have performed on Zn1-xMxO (M = Cd, Cu) materials. Generally, Cd or Cu incorporation on ZnO can decrease the bandgap of Zn1-xMxO and increase the density of states (DOS) at the gap region. Cd doping in ZnO decrease...
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id-itb.:118912017-09-27T11:42:36ZAb Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method MAHMUD HANNA (NIM 10505012), ATHIYA Indonesia Final Project INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/11891 Ab initio calculations using full-potential linearized augmented plane-wave (FP-LAPW) have performed on Zn1-xMxO (M = Cd, Cu) materials. Generally, Cd or Cu incorporation on ZnO can decrease the bandgap of Zn1-xMxO and increase the density of states (DOS) at the gap region. Cd doping in ZnO decrease bandgap of Zn1-xMxO as increasing Cd concentration. The Cd doping in ZnO also shift conduction band slightly to the lower energy and also increase the DOS at the conduction band of Zn1-xCdxO. The result of electronic band strucures of Zn1-xCdxO also showed the lines energy splitting. The energy splitting on the Zn1-xCdxO alloy is increased as increasing Cd concentration from 0.125 to 0.375. The result of the Zn1-xCuxO electronic band structures and DOS calculations have the same tendency to the Zn1-xCdxO alloy, but Cu incorporations give the more bandgap narrowing than Cd ones. The Zn1-xCuxO resulting DOS on the maximum valence band and minimum conduction band have the larger DOS than Zn1-xCdxO. text |
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Ab initio calculations using full-potential linearized augmented plane-wave (FP-LAPW) have performed on Zn1-xMxO (M = Cd, Cu) materials. Generally, Cd or Cu incorporation on ZnO can decrease the bandgap of Zn1-xMxO and increase the density of states (DOS) at the gap region. Cd doping in ZnO decrease bandgap of Zn1-xMxO as increasing Cd concentration. The Cd doping in ZnO also shift conduction band slightly to the lower energy and also increase the DOS at the conduction band of Zn1-xCdxO. The result of electronic band strucures of Zn1-xCdxO also showed the lines energy splitting. The energy splitting on the Zn1-xCdxO alloy is increased as increasing Cd concentration from 0.125 to 0.375. The result of the Zn1-xCuxO electronic band structures and DOS calculations have the same tendency to the Zn1-xCdxO alloy, but Cu incorporations give the more bandgap narrowing than Cd ones. The Zn1-xCuxO resulting DOS on the maximum valence band and minimum conduction band have the larger DOS than Zn1-xCdxO. |
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Final Project |
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MAHMUD HANNA (NIM 10505012), ATHIYA |
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MAHMUD HANNA (NIM 10505012), ATHIYA Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method |
author_facet |
MAHMUD HANNA (NIM 10505012), ATHIYA |
author_sort |
MAHMUD HANNA (NIM 10505012), ATHIYA |
title |
Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method |
title_short |
Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method |
title_full |
Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method |
title_fullStr |
Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method |
title_full_unstemmed |
Ab Initio Study of Electronic Structures of Wurtzite Zn1-xMxO (M = Cd, Cu) by Density Functional Theory Based on FP-LAPW Method |
title_sort |
ab initio study of electronic structures of wurtzite zn1-xmxo (m = cd, cu) by density functional theory based on fp-lapw method |
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https://digilib.itb.ac.id/gdl/view/11891 |
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1822016741255938048 |